![sio2 xps peak sio2 xps peak](https://docsdrive.com/images/ansinet/jas/2011/fig3-2k11-1391-1395.gif)
Oxide thickness is commonly measured by ellipsometry but as film thicknesses is scaled down to several atomic layers, surface analytical techniques such as XPS become applicable tools to quantify these films. Precise thickness measurement of these ultra thin films is very critical in the development of Si- based devices. Ultra thin SiO 2 films are critical for novel nanoelectronic devices as well as for conventional deep submicron ULSIC where the gate oxide is reduced to less than 30Ǻ. One of the X-ray photoelectron spectroscopy (XPS) results is that the difference for and orientations is observed in the intermediate oxidation state spectra. The distribution of the intermediate oxidation states in the oxide film and the chemical bonding configuration at the interface for Si(100) and Si(111) were investigated using measurements of Si 2p photoelectron spectra. The chemical bonding configurations deduced from the observed oxidation states of silicon at the interface are the important basis for the understanding of the electronic states. The existence of abrupt interfaces, atomic displacements of interface silicon and intermediate oxidation states of silicon are part of different experiments. thermal oxidation and annealing) are so simple conceptually.Īs a result of extreme decrease in the dimensions of Si metal-oxide-semiconductor field effect transistor device (MOSFET), the electronic states in Si/SiO interfacial transition region playa vital role in device operation. At the same time the understanding of the underlying chemical and physical mechanisms responsible for such perfect structures represents a profound fundamental challenge, one which has a particular scientific significance in that the materials (Si, O) and chemical reaction processes (e.g. The use of thermal oxidation of Si(100) to grow very thin SiO 2 layers (~ 100Ǻ) with extremely high electrical quality of both film and interface is a key element on which has been built the success of modern MOS (metal-oxide-semiconductor) device technology. Native oxidation of silicon is known to have detrimental effects on ultra-large-scale integrated circuit (ULSIC) processes and properties including metal/silicon ohmic contact, the low-temperature epitaxy of silicide and dielectric breakdown of thin SiO 2. This silicon oxide layer is a high quality electrically insulating layer on the silicon surface, serving as a dielectric in numerous devices that can also be a preferential masking layer in many steps during device fabrication. The ability to form a chemically stable protective layer of silicon dioxide (SiO 2) at the surface of silicon is one of the main reasons that make silicon the most widely used semiconductor material. Due to its dominant role in silicon devices technologies the SiO 2/Si interface has been intensively studied in the last five decades.